onsemi 2N6387G NPN Darlington Transistor, 10 A dc 60 V dc HFE:1000, 3-Pin TO-220

The Power 8A 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

High DC Current Gain - hFE=2500 (Typ) @Ic=4.0 Adc
Collector-Emitter Sustaining Voltage - @ 100 mAdc, Vceo(sus) = 60 Vdc (Min) - 2N6387, Vceo (sus) = 80 Vdc (Min) - 2N6388
Collector-Emitter Sustaining Voltage - @ 100 mAdc , Vceo(sus) = 60 Vdc (Min) - 2N6387, Vceo (sus) = 80 Vdc (Min) - 2N6388
Low Collector-Emitter Saturation Voltage- Vce(sat) = 2.0 Vdc (Max) @ Ic=5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
T0-220AB Compact Package