Infineon 16 kB SPI FRAM 8-Pin SOIC, FM25L16B-G

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Subtotal (1 pack of 5 units)*

Kr.72 76 

(exc. VAT)

Kr.90 95 

(inc. VAT)

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In Stock
  • Plus 65 unit(s) shipping from 09. februar 2026
  • Plus 5 unit(s) shipping from 09. februar 2026
  • Plus 565 unit(s) shipping from 16. februar 2026
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Units
Per unit
Per Pack*
5 - 10Kr. 14,552Kr. 72,76
15 - 25Kr. 11,212Kr. 56,06
30 - 95Kr. 10,89Kr. 54,45
100 - 495Kr. 10,616Kr. 53,08
500 +Kr. 10,388Kr. 51,94

*price indicative

Packaging Options:
RS Stock No.:
125-4226
Mfr. Part No.:
FM25L16B-G
Brand:
Infineon
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Brand

Infineon

Product Type

FRAM

Memory Size

16kB

Organisation

2K x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

20ns

Mount Type

Surface

Maximum Clock Frequency

20MHz

Package Type

SOIC

Pin Count

8

Length

4.97mm

Height

1.48mm

Width

3.98 mm

Standards/Approvals

No

Maximum Operating Temperature

85°C

Maximum Supply Voltage

3.6V

Automotive Standard

AEC-Q100

Number of Bits per Word

8

Minimum Operating Temperature

-40°C

Number of Words

2k

Minimum Supply Voltage

2.7V

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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