Infineon 16 kB 2 Wire I2C FRAM 8-Pin SOIC

View all FRAM Memory
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Subtotal (1 tube of 97 units)*

Kr.1 222 491 

(exc. VAT)

Kr.1 528 138 

(inc. VAT)

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  • Plus 194 unit(s) shipping from 09. februar 2026
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Units
Per unit
Per Tube*
97 - 97Kr. 12,603Kr. 1 222,49
194 - 485Kr. 11,316Kr. 1 097,65
582 - 970Kr. 11,015Kr. 1 068,46
1067 +Kr. 10,709Kr. 1 038,77

*price indicative

RS Stock No.:
188-5400
Mfr. Part No.:
FM24CL16B-G
Brand:
Infineon
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Brand

Infineon

Memory Size

16kB

Product Type

FRAM

Organisation

2K x 8 bit

Interface Type

2 Wire I2C

Data Bus Width

8bit

Maximum Random Access Time

3000ns

Mount Type

Surface

Maximum Clock Frequency

1MHz

Package Type

SOIC

Pin Count

8

Height

1.38mm

Width

3.98 mm

Length

4.97mm

Standards/Approvals

No

Maximum Operating Temperature

85°C

Number of Words

2k

Automotive Standard

AEC-Q100

Number of Bits per Word

8

Minimum Operating Temperature

-40°C

Maximum Supply Voltage

3.65V

Minimum Supply Voltage

2.7V

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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