Infineon 4 kB Serial-SPI FRAM 8-Pin SOIC, FM25L04B-G

RS Stock No.:: 273-7386
Mfr. Part No.:: FM25L04B-G
Brand:: Infineon

Infineon 4 kB Serial-SPI FRAM 8-Pin SOIC, FM25L04B-G

Bulk discount available

Subtotal (1 tube of 97 units)*

Kr. 1 358,291

(exc. VAT)

Kr. 1 697,888

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Tube*
97 - 97	Kr. 14,003	Kr. 1 358,29
194 +	Kr. 12,339	Kr. 1 196,88

*price indicative

RS Stock No.:: 273-7386
Mfr. Part No.:: FM25L04B-G
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Memory Size	4kB
	Product Type	FRAM
	Organisation	512 x 8 bit
	Interface Type	Serial-SPI
	Data Bus Width	8bit
	Maximum Clock Frequency	20MHz
	Package Type	SOIC
	Pin Count	8
	Standards/Approvals	Restriction of hazardous substances (RoHS)
	Maximum Operating Temperature	85°C
	Minimum Operating Temperature	40°C
	Maximum Supply Voltage	3.6V
	Minimum Supply Voltage	2.7V
	Number of Words	512
	Number of Bits per Word	8
	Automotive Standard	No

	Select all
	Brand Infineon
	Memory Size 4kB
	Product Type FRAM
	Organisation 512 x 8 bit
	Interface Type Serial-SPI
	Data Bus Width 8bit
	Maximum Clock Frequency 20MHz
	Package Type SOIC
	Pin Count 8
	Standards/Approvals Restriction of hazardous substances (RoHS)
	Maximum Operating Temperature 85°C
	Minimum Operating Temperature 40°C
	Maximum Supply Voltage 3.6V
	Minimum Supply Voltage 2.7V
	Number of Words 512
	Number of Bits per Word 8
	Automotive Standard No

Datasheet - FM25L04B-G

The Infineon FRAM is a 4 Kbit non volatile memory employing an Advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.

RoHS compliant

Low power consumption

Very fast serial peripheral Interface

Sophisticated write protection scheme

High endurance 100 trillion read and write

Advanced high reliability ferroelectric process

Infineon 4 kB Serial-SPI FRAM 8-Pin SOIC, FM25L04B-G

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