Infineon 4 kB Serial-SPI FRAM 8-Pin SOIC, FM25L04B-G
- RS Stock No.:
- 273-7386
- Mfr. Part No.:
- FM25L04B-G
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 273-7386
- Mfr. Part No.:
- FM25L04B-G
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | FRAM | |
| Memory Size | 4kB | |
| Organisation | 512 x 8 bit | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 20MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Standards/Approvals | Restriction of hazardous substances (RoHS) | |
| Maximum Operating Temperature | 85°C | |
| Automotive Standard | No | |
| Minimum Operating Temperature | 40°C | |
| Maximum Supply Voltage | 3.6V | |
| Number of Bits per Word | 8 | |
| Minimum Supply Voltage | 2.7V | |
| Number of Words | 512 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type FRAM | ||
Memory Size 4kB | ||
Organisation 512 x 8 bit | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 20MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Standards/Approvals Restriction of hazardous substances (RoHS) | ||
Maximum Operating Temperature 85°C | ||
Automotive Standard No | ||
Minimum Operating Temperature 40°C | ||
Maximum Supply Voltage 3.6V | ||
Number of Bits per Word 8 | ||
Minimum Supply Voltage 2.7V | ||
Number of Words 512 | ||
The Infineon FRAM is a 4 Kbit non volatile memory employing an Advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Very fast serial peripheral Interface
Sophisticated write protection scheme
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
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