STMicroelectronics L6388ED013TR High Side Gate Driver 2, 650 mA 8-Pin 17V, SO-8
- RS Stock No.:
- 152-017P
- Mfr. Part No.:
- L6388ED013TR
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal 50 units (supplied on a continuous strip)*
Kr. 716,10
(exc. VAT)
Kr. 895,10
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 1 865 unit(s) shipping from 28 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 245 | Kr. 14,322 |
| 250 - 495 | Kr. 13,98 |
| 500 + | Kr. 13,088 |
*price indicative
- RS Stock No.:
- 152-017P
- Mfr. Part No.:
- L6388ED013TR
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Gate Driver Module | |
| Output Current | 650mA | |
| Pin Count | 8 | |
| Package Type | SO-8 | |
| Fall Time | 40ns | |
| Driver Type | High Side | |
| Rise Time | 70ns | |
| Minimum Supply Voltage | 17V | |
| Maximum Supply Voltage | 17V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -45°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | L6388ED013TR | |
| Mount Type | Surface | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Gate Driver Module | ||
Output Current 650mA | ||
Pin Count 8 | ||
Package Type SO-8 | ||
Fall Time 40ns | ||
Driver Type High Side | ||
Rise Time 70ns | ||
Minimum Supply Voltage 17V | ||
Maximum Supply Voltage 17V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -45°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Series L6388ED013TR | ||
Mount Type Surface | ||
- COO (Country of Origin):
- CN
The STMicroelectronics high voltage gate driver, manufactured with the BCD offline technology, and able to drive a half-bridge of power MOSFET/IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function. Further prevention from outputs cross conduction is guaranteed by the dead time function.
Internal bootstrap diode
Outputs in phase with inputs
Dead time and interlocking function
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