ROHM GNP1150TCA-ZE2 1, 11 A 8-Pin 650V
- RS Stock No.:
- 264-698P
- Mfr. Part No.:
- GNP1150TCA-ZE2
- Brand:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal 20 units (supplied on a continuous strip)*
Kr. 1 210,40
(exc. VAT)
Kr. 1 513,00
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 80 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 - 198 | Kr. 60,52 |
| 200 + | Kr. 55,825 |
*price indicative
- RS Stock No.:
- 264-698P
- Mfr. Part No.:
- GNP1150TCA-ZE2
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | GaN FET | |
| Output Current | 11A | |
| Pin Count | 8 | |
| Fall Time | 8.3ns | |
| Number of Outputs | 1 | |
| Rise Time | 5.3ns | |
| Maximum Supply Voltage | 650V | |
| Number of Drivers | 1 | |
| Maximum Operating Temperature | 150°C | |
| Series | GNP1150TCA-Z NA | |
| Height | 0.9mm | |
| Length | 8mm | |
| Standards/Approvals | RoHS | |
| Width | 8mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type GaN FET | ||
Output Current 11A | ||
Pin Count 8 | ||
Fall Time 8.3ns | ||
Number of Outputs 1 | ||
Rise Time 5.3ns | ||
Maximum Supply Voltage 650V | ||
Number of Drivers 1 | ||
Maximum Operating Temperature 150°C | ||
Series GNP1150TCA-Z NA | ||
Height 0.9mm | ||
Length 8mm | ||
Standards/Approvals RoHS | ||
Width 8mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The ROHM E-mode Gallium-Nitride(GaN) FET is an 650V GaN HEMT which has achieved the industry's highest class FOM (Ron Ciss Ron Coss). It is a product of the EcoGaN series that contributes to power conversion efficiency and size reduction by making the best use of low ON resistance and high-speed switching. ESD protection function is built in for high-reliability design. In addition, the highly versatile packages provide excellent heat dissipation and facilitates mounting.
650V E-mode GaN FET
70mΩ Resistance
5.2nC Gate Charge
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