Infineon 2ED2106S06FXUMA1 MOSFET Gate Driver 2, 290 mA 8-Pin 20 V, DSO

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Subtotal (1 pack of 10 units)*

Kr.86 37 

(exc. VAT)

Kr.107 96 

(inc. VAT)

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Units
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Per Pack*
10 - 40Kr. 8,637Kr. 86,37
50 - 90Kr. 8,214Kr. 82,14
100 - 240Kr. 7,848Kr. 78,48
250 - 490Kr. 7,505Kr. 75,05
500 +Kr. 6,99Kr. 69,90

*price indicative

Packaging Options:
RS Stock No.:
226-6020
Mfr. Part No.:
2ED2106S06FXUMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Output Current

290mA

Pin Count

8

Fall Time

80ns

Package Type

DSO

Driver Type

MOSFET

Number of Outputs

2

Rise Time

100ns

Minimum Supply Voltage

20V

Number of Drivers

2

Maximum Supply Voltage

20V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Series

2ED2106S06F

Standards/Approvals

No

Width

3.9 mm

Length

4.9mm

Height

1.72mm

Mount Type

Surface

Automotive Standard

No

The Infineon 2ED2106S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Floating channel designed for bootstrap operation

Operating voltages (VS node) upto + 650 V

Maximum bootstrap voltage (VB node) of + 675 V

Integrated ultra-fast, low resistance bootstrap diode

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