Infineon 2ED2181S06FXUMA1 MOSFET Gate Driver 2, 2.5 A 8-Pin 20 V, DSO

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Subtotal (1 pack of 5 units)*

Kr.94 04 

(exc. VAT)

Kr.117 55 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45Kr. 18,808Kr. 94,04
50 - 120Kr. 15,97Kr. 79,85
125 - 245Kr. 14,85Kr. 74,25
250 - 495Kr. 13,912Kr. 69,56
500 +Kr. 12,996Kr. 64,98

*price indicative

Packaging Options:
RS Stock No.:
226-6025
Mfr. Part No.:
2ED2181S06FXUMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Output Current

2.5A

Pin Count

8

Fall Time

30ns

Package Type

DSO

Number of Outputs

2

Driver Type

MOSFET

Rise Time

15ns

Minimum Supply Voltage

20V

Number of Drivers

2

Maximum Supply Voltage

20V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

No

Height

1.72mm

Width

3.9 mm

Length

4.9mm

Series

2ED2181S06F

Mount Type

Surface

Automotive Standard

No

The Infineon 2ED2181S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Floating channel designed for bootstrap operation

Operating voltages (VS node) upto + 650 V

Maximum bootstrap voltage (VB node) of + 675 V

Integrated ultra-fast, low resistance bootstrap diode

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