Infineon 2ED21091S06FXUMA1, 290 mA, 10/20V, DSO-8
- RS Stock No.:
- 258-0605
- Mfr. Part No.:
- 2ED21091S06FXUMA1
- Brand:
- Infineon
In stock for same day dispatch
Price Each (On a Reel of 2500)
Kr. 7,952
(exc. VAT)
Kr. 9,94
(inc. VAT)
| Units | Per unit | Per Reel* |
| 2500 + | Kr. 7,952 | Kr. 19 880,00 |
| *price indicative | ||
- RS Stock No.:
- 258-0605
- Mfr. Part No.:
- 2ED21091S06FXUMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. Based on Infineon SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
Floating channel designed for bootstrap operation
Independent under voltage lockout for both channels
The dual function DT/SD input turns off both channels
Floating channel designed for bootstrap operation
Independent under voltage lockout for both channels
The dual function DT/SD input turns off both channels
Specifications
Attribute | Value |
|---|---|
| Logic Type | CMOS, LSTTL |
| Output Current | 290 mA |
| Supply Voltage | 10/20V |
| Package Type | DSO-8 |
| Fall Time | 35ns |