IXYS MIXA450PF1200TSF, SimBus F Dual IGBT Transistor Module, 650 A max, 1200 V, PCB Mount

  • RS Stock No. 146-1703
  • Mfr. Part No. MIXA450PF1200TSF
  • Brand IXYS
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): DE
Product Details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Configuration Dual
Transistor Configuration Series
Maximum Continuous Collector Current 650 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±30V
Channel Type N
Mounting Type PCB Mount
Package Type SimBus F
Pin Count 11
Maximum Power Dissipation 2.1 kW
Dimensions 152 x 62 x 17mm
Height 17mm
Length 152mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -40 °C
Width 62mm
3 In stock for delivery within 1 working days
Price Each (In a Box of 3)
kr 1 233,653
(exc. VAT)
kr 1 542,066
(inc. VAT)
Units
Per unit
Per Box*
3 - 12
kr 1 233,653
kr 3 700,959
15 - 27
kr 1 202,05
kr 3 606,15
30 +
kr 1 171,973
kr 3 515,919
*price indicative
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