- RS Stock No.:
- 168-4565
- Mfr. Part No.:
- MIXA225PF1200TSF
- Brand:
- IXYS
Available to back order for despatch 09.03.2026
Added
Price Each (In a Box of 3)
Kr. 1 340,31
(exc. VAT)
Kr. 1 675,39
(inc. VAT)
Units | Per unit | Per Box* |
3 + | Kr. 1 340,31 | Kr. 4 020,93 |
*price indicative |
- RS Stock No.:
- 168-4565
- Mfr. Part No.:
- MIXA225PF1200TSF
- Brand:
- IXYS
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- DE
Product Details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 360 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±30V |
Maximum Power Dissipation | 1100 W |
Configuration | Dual |
Package Type | SimBus F |
Mounting Type | PCB Mount |
Channel Type | N |
Pin Count | 11 |
Transistor Configuration | Series |
Dimensions | 152 x 62 x 17mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +150 °C |
- RS Stock No.:
- 168-4565
- Mfr. Part No.:
- MIXA225PF1200TSF
- Brand:
- IXYS