ON Semiconductor NXH100B120H3Q0PTG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount

RS Stock No.:: 195-8769
Mfr. Part No.:: NXH100B120H3Q0PTG
Brand:: onsemi

ON Semiconductor NXH100B120H3Q0PTG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount

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Price Each

Kr. 865,80

(exc. VAT)

Kr. 1 082,25

(inc. VAT)

Units	Per unit
1 - 1	Kr. 865,80
2 - 5	Kr. 842,36
6 - 11	Kr. 820,14
12 - 19	Kr. 799,14
20 +	Kr. 779,37

RS Stock No.:: 195-8769
Mfr. Part No.:: NXH100B120H3Q0PTG
Brand:: onsemi

Technical Reference

Datasheet NXH100B120H3Q0PTG

Legislation and Compliance

Product Details

The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

IGBT Specifications: VCE(SAT) = 1.77 V, ESW = 2200 uJ
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
SiC Rectifier Specification: VF = 1.44 V
SiC Diode for high speed switching
Solder pin and press-fit pin options available
Flexible mounting
Applications
MPPT Boost Stage
Battery Charger Boost Stage

Specifications

Attribute	Value
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	186 W
Package Type	Q0BOOST
Configuration	Dual
Mounting Type	Surface Mount
Channel Type	N
Pin Count	22
Transistor Configuration	Dual
Dimensions	66.2 x 32.8 x 11.9mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-40 °C

RS Stock No.:: 195-8769
Mfr. Part No.:: NXH100B120H3Q0PTG
Brand:: onsemi

Datasheet NXH100B120H3Q0PTG