Infineon IKWH50N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 80 A 650 V, 3-Pin PG-TO247-3-STD-NN4.8,

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Subtotal (1 tube of 30 units)*

Kr.1 329 84 

(exc. VAT)

Kr.1 662 30 

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 90Kr. 44,328Kr. 1 329,84
120 +Kr. 42,114Kr. 1 263,42

*price indicative

RS Stock No.:
285-011
Mfr. Part No.:
IKWH50N65EH7XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

249 W

Package Type

PG-TO247-3-STD-NN4.8

Configuration

Single Collector, Single Emitter, Single Gate

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

The Infineon IGBT is a sophisticated high speed IGBT designed to deliver impressive performance in demanding applications. Utilising advanced trench stop technology, this 650V device offers significantly reduced switching losses and an ultra low collector emitter saturation voltage. Its robust design ensures exceptional reliability, making it an ideal choice for energy efficient systems, such as industrial UPS and electric vehicle charging solutions. With excellent thermal management characteristics and a compliance with stringent JEDEC standards, this device stands out for its versatility and durability in various applications.

Low switching losses improve efficiency
Humidity robustness for reliable operation
Optimized for two and three level topologies
Soft and fast recovery diode enhances performance
Validated to industrial standards for reliability
Comprehensive product spectrum and PSpice models
High collector current for demanding applications

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