Infineon IKWH50N65EH7XKSA1, Type N-Channel IGBT 650 V, 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole
- RS Stock No.:
- 285-011
- Mfr. Part No.:
- IKWH50N65EH7XKSA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 285-011
- Mfr. Part No.:
- IKWH50N65EH7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 249W | |
| Package Type | PG-TO-247-3-STD-NN4.8 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | 40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 20.1mm | |
| Width | 15.9 mm | |
| Height | 5.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 249W | ||
Package Type PG-TO-247-3-STD-NN4.8 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature 40°C | ||
Maximum Operating Temperature 175°C | ||
Length 20.1mm | ||
Width 15.9 mm | ||
Height 5.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IGBT is a sophisticated high speed IGBT designed to deliver impressive performance in demanding applications. Utilising Advanced trench stop technology, this 650V device offers significantly reduced switching losses and an ultra low collector emitter saturation voltage. Its robust design ensures exceptional reliability, making it an Ideal choice for energy efficient systems, such as industrial UPS and electric vehicle charging solutions. With excellent thermal management characteristics and a compliance with stringent JEDEC standards, this device stands out for its versatility and durability in various applications.
Low switching losses improve efficiency
Humidity robustness for reliable operation
Optimized for two and three level topologies
Soft and fast recovery diode enhances performance
Validated to industrial standards for reliability
Comprehensive product spectrum and PSpice models
High collector current for demanding applications
Related links
- Infineon IKWH50N65EH7XKSA1 Single Collector Single Gate IGBT 3-Pin PG-TO247-3-STD-NN4.8,
- Infineon IKWH75N65EH7XKSA1 Single Collector Single Gate IGBT 3-Pin PG-TO247-3-STD-NN4.8,
- Infineon IKWH40N65EH7XKSA1 Single Collector Single Gate IGBT 3-Pin PG-TO247-3-STD-NN4.8,
- Infineon IKQ50N120CH7XKSA1 Single Collector Single Gate IGBT 3-Pin PG-TO247-3-PLUS-N,
- Infineon IGQ100N120S7XKSA1 Single Collector Single Gate IGBT 3-Pin PG-TO247-3-PLUS-N,
- Infineon IKQ120N120CS7XKSA1 Single Collector Single Gate IGBT 3-Pin PG-TO247-3-PLUS-N,
- Infineon IKQ120N65EH7XKSA1 Single Collector Single Gate IGBT 3-Pin PG-TO247-3-PLUS-N,
- Infineon IKQ150N65EH7XKSA1 Single Collector Single Gate IGBT 3-Pin PG-TO247-3-PLUS-N,