Infineon FS200R12KT4RBOSA1, Type N-Channel IGBT Module, 280 A 1200 V, 35-Pin EconoPACK 3, Clamp

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Subtotal (1 unit)*

Kr. 1 263,89

(exc. VAT)

Kr. 1 579,86

(inc. VAT)

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1 - 1Kr. 1 263,89
2 - 2Kr. 1 200,63
3 +Kr. 1 133,70

*price indicative

Packaging Options:
RS Stock No.:
110-7155
Mfr. Part No.:
FS200R12KT4RBOSA1
Brand:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

280A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

1kW

Package Type

EconoPACK 3

Mount Type

Clamp

Channel Type

Type N

Pin Count

35

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

122mm

Height

17mm

Width

62 mm

Automotive Standard

No

RoHS Status: Not Applicable

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.

The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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