Infineon IKW75N65EL5XKSA1 IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 110-7176
- Mfr. Part No.:
- IKW75N65EL5XKSA1
- Brand:
- Infineon
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Subtotal (1 pack of 2 units)*
Kr.142 93
(exc. VAT)
Kr.178 662
(inc. VAT)
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In Stock
- 152 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | Kr. 71,465 | Kr. 142,93 |
| 10 - 18 | Kr. 67,895 | Kr. 135,79 |
| 20 - 48 | Kr. 65,035 | Kr. 130,07 |
| 50 - 98 | Kr. 62,235 | Kr. 124,47 |
| 100 + | Kr. 58,00 | Kr. 116,00 |
*price indicative
- RS Stock No.:
- 110-7176
- Mfr. Part No.:
- IKW75N65EL5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 75 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 536 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.13 x 5.21 x 21.1mm | |
| Energy Rating | 7.22mJ | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -40 °C | |
| Gate Capacitance | 12100pF | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 75 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 536 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.13 x 5.21 x 21.1mm | ||
Energy Rating 7.22mJ | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -40 °C | ||
Gate Capacitance 12100pF | ||
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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