onsemi NGTB25N120FL3WG, Type N-Channel IGBT-Ultra Field Stop, 25 A 1200 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

Kr. 145,06

(exc. VAT)

Kr. 181,32

(inc. VAT)

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Temporarily out of stock
  • 36 unit(s) shipping from 16 March 2026
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Units
Per unit
Per Pack*
2 - 18Kr. 72,53Kr. 145,06
20 +Kr. 62,52Kr. 125,04

*price indicative

Packaging Options:
RS Stock No.:
123-8830
Mfr. Part No.:
NGTB25N120FL3WG
Brand:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current Ic

25A

Product Type

IGBT-Ultra Field Stop

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

349W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

1.7V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

Field Stop

Length

20.8mm

Width

16.25 mm

Automotive Standard

No

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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