onsemi NGTB35N65FL2WG, Type N-Channel IGBT-Field Stop II, 70 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

Kr.137 17 

(exc. VAT)

Kr.171 462 

(inc. VAT)

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Temporarily out of stock
  • 22 unit(s) shipping from 23. februar 2026
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Per Pack*
2 - 18Kr. 68,585Kr. 137,17
20 +Kr. 59,09Kr. 118,18

*price indicative

Packaging Options:
RS Stock No.:
842-7898
Mfr. Part No.:
NGTB35N65FL2WG
Brand:
onsemi
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Brand

onsemi

Product Type

IGBT-Field Stop II

Maximum Continuous Collector Current Ic

70A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

300W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.7V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Series

Field Stop

Standards/Approvals

RoHS

Height

5.3mm

Length

20.8mm

Width

16.25 mm

Automotive Standard

No

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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