onsemi, Type N-Channel IGBT-Field Stop II, 70 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 163-0258
- Mfr. Part No.:
- NGTB35N65FL2WG
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tube of 30 units)*
Kr.1 230 15
(exc. VAT)
Kr.1 537 68
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 18. mai 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | Kr. 41,005 | Kr. 1 230,15 |
| 120 - 240 | Kr. 32,68 | Kr. 980,40 |
| 270 - 480 | Kr. 30,96 | Kr. 928,80 |
| 510 - 990 | Kr. 29,283 | Kr. 878,49 |
| 1020 + | Kr. 25,896 | Kr. 776,88 |
*price indicative
- RS Stock No.:
- 163-0258
- Mfr. Part No.:
- NGTB35N65FL2WG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current Ic | 70A | |
| Product Type | IGBT-Field Stop II | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 300W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.25 mm | |
| Height | 5.3mm | |
| Series | Field Stop | |
| Standards/Approvals | RoHS | |
| Length | 20.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current Ic 70A | ||
Product Type IGBT-Field Stop II | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 300W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Operating Temperature 175°C | ||
Width 16.25 mm | ||
Height 5.3mm | ||
Series Field Stop | ||
Standards/Approvals RoHS | ||
Length 20.8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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