onsemi NGTB35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole

View all IGBTs
Bulk discount available

Subtotal (1 tube of 30 units)*

Kr.1 230 15 

(exc. VAT)

Kr.1 537 68 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 30 unit(s) shipping from 21. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
30 - 90Kr. 41,005Kr. 1 230,15
120 - 240Kr. 32,68Kr. 980,40
270 - 480Kr. 30,96Kr. 928,80
510 - 990Kr. 29,283Kr. 878,49
1020 +Kr. 25,896Kr. 776,88

*price indicative

RS Stock No.:
163-0258
Mfr. Part No.:
NGTB35N65FL2WG
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Maximum Continuous Collector Current

70 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

300 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.26 x 5.3 x 21.08mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
CN

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.


IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links