onsemi NGTB40N65FL2WG IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

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Bulk discount available

Subtotal (1 tube of 30 units)*

Kr.1 353 12 

(exc. VAT)

Kr.1 691 40 

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 90Kr. 45,104Kr. 1 353,12
120 - 240Kr. 36,181Kr. 1 085,43
270 - 480Kr. 34,183Kr. 1 025,49
510 +Kr. 32,074Kr. 962,22

*price indicative

RS Stock No.:
145-3469
Mfr. Part No.:
NGTB40N65FL2WG
Brand:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

366 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.26 x 5.3 x 21.08mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
CN

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.


IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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