onsemi FGAF40S65AQ, N-Channel IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole
- RS Stock No.:
- 185-8956
- Mfr. Part No.:
- FGAF40S65AQ
- Brand:
- onsemi
Get a bulk buy discount
Add 30 more to save 13%
View bulk pricing optionsSubtotal (1 pack of 3 units)*
Kr. 128,81
(exc. VAT)
Kr. 161,01
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Last RS stock
- Final 495 unit(s), ready to ship
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 3 - 27 | Kr. 42,937 | Kr. 128,81 | - |
| 30 + | Kr. 37,027 | Kr. 111,08 | 13% |
*price indicative
- RS Stock No.:
- 185-8956
- Mfr. Part No.:
- FGAF40S65AQ
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 94W | |
| Package Type | TO-3PF | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 15.3mm | |
| Series | Trench | |
| Standards/Approvals | Pb-Free and is RoHS | |
| Length | 19.1mm | |
| Automotive Standard | No | |
| Energy Rating | 325mJ | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 94W | ||
Package Type TO-3PF | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Width 15.3mm | ||
Series Trench | ||
Standards/Approvals Pb-Free and is RoHS | ||
Length 19.1mm | ||
Automotive Standard No | ||
Energy Rating 325mJ | ||
Non Compliant with RoHS
- COO (Country of Origin):
- KR
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications.
Maximum junction temperature : TJ = 175°C
Positive temperaure co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
High input impedance
100% of the Parts tested for ILM
Fast switching
Tightened parameter distribution
IGBT with monolithic reverse conducting diode
Applications
Consumer Appliances
PFC, Welder
Industrial application
Related links
- onsemi 80 A 650 V Through Hole
- onsemi AFGB40T65SQDN 80 A 650 V Surface
- Infineon IKW50N65ES5XKSA1 80 A 650 V Through Hole
- STMicroelectronics STGW40H65DFB 80 A 650 V Through Hole
- ROHM RGTVX6TS65DGC13 80 A 650 V Through Hole
- STMicroelectronics STGW60H65DFB 80 A 650 V Through Hole
- STMicroelectronics STGWT60H65DFB 80 A 650 V Through Hole
- STMicroelectronics STGW40H65FB 80 A 650 V Through Hole