Infineon IKW50N65ES5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 133-9879
Mfr. Part No.:: IKW50N65ES5XKSA1
Brand:: Infineon

Infineon IKW50N65ES5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

301 In stock for same day dispatch

Added

Price Each

Kr. 28,26

(exc. VAT)

Kr. 35,32

(inc. VAT)

Units	Per unit
1 +	Kr. 28,26

RS Stock No.:: 133-9879
Mfr. Part No.:: IKW50N65ES5XKSA1
Brand:: Infineon

Technical Reference

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	80 A
Maximum Collector Emitter Voltage	650 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	274 W
Number of Transistors	1
Package Type	TO-247
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	30kHz
Transistor Configuration	Single
Dimensions	16.13 x 5.21 x 21.1mm
Gate Capacitance	3100pF
Maximum Operating Temperature	+175 °C
Energy Rating	1.78mJ
Minimum Operating Temperature	-40 °C

RS Stock No.:: 133-9879
Mfr. Part No.:: IKW50N65ES5XKSA1
Brand:: Infineon