Infineon IGW50N65H5FKSA1, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 110-7157
- Mfr. Part No.:
- IGW50N65H5FKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 4 units)*
Kr. 163,132
(exc. VAT)
Kr. 203,916
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 136 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 16 | Kr. 40,783 | Kr. 163,13 |
| 20 - 36 | Kr. 38,753 | Kr. 155,01 |
| 40 - 96 | Kr. 37,095 | Kr. 148,38 |
| 100 - 196 | Kr. 34,663 | Kr. 138,65 |
| 200 + | Kr. 32,605 | Kr. 130,42 |
*price indicative
- RS Stock No.:
- 110-7157
- Mfr. Part No.:
- IGW50N65H5FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 305W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | TrenchStop | |
| Standards/Approvals | RoHS, JEDEC | |
| Automotive Standard | No | |
| Energy Rating | 0.7mJ | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 305W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series TrenchStop | ||
Standards/Approvals RoHS, JEDEC | ||
Automotive Standard No | ||
Energy Rating 0.7mJ | ||
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- Infineon 80 A 650 V Through Hole
- Infineon IKW50N65EH5XKSA1 80 A 650 V Through Hole
- Infineon IKW50N65ES5XKSA1 80 A 650 V Through Hole
- Infineon IKW75N65ES5XKSA1 80 A 650 V Through Hole
- Infineon IKWH75N65EH7XKSA1 80 A 650 V Through Hole
- Infineon IKZA50N65EH7XKSA1 80 A 650 V Through Hole
- Infineon IKZA40N65EH7XKSA1 80 A 650 V Through Hole
- Infineon 80 A 650 V Through Hole