Infineon IKW50N65EH5XKSA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO247
- RS Stock No.:
- 226-6118
- Mfr. Part No.:
- IKW50N65EH5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.123 02
(exc. VAT)
Kr.153 78
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 210 unit(s) shipping from 05. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | Kr. 61,51 | Kr. 123,02 |
| 10 - 18 | Kr. 55,37 | Kr. 110,74 |
| 20 - 48 | Kr. 51,65 | Kr. 103,30 |
| 50 - 98 | Kr. 47,99 | Kr. 95,98 |
| 100 + | Kr. 44,275 | Kr. 88,55 |
*price indicative
- RS Stock No.:
- 226-6118
- Mfr. Part No.:
- IKW50N65EH5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 30V | |
| Maximum Power Dissipation | 275 W | |
| Number of Transistors | 1 | |
| Configuration | Single | |
| Package Type | PG-TO247 | |
| Channel Type | N | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 30V | ||
Maximum Power Dissipation 275 W | ||
Number of Transistors 1 | ||
Configuration Single | ||
Package Type PG-TO247 | ||
Channel Type N | ||
Pin Count 3 | ||
The Infineon IKW50N65EH5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
Factor 2 reduction in switching losses
200mV reduction in VCEsat
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