Infineon IKW50N65EH5XKSA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO247

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Subtotal (1 tube of 30 units)*

Kr.1 230 15 

(exc. VAT)

Kr.1 537 68 

(inc. VAT)

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  • 210 unit(s) shipping from 05. januar 2026
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Units
Per unit
Per Tube*
30 - 30Kr. 41,005Kr. 1 230,15
60 - 120Kr. 38,953Kr. 1 168,59
150 +Kr. 37,313Kr. 1 119,39

*price indicative

RS Stock No.:
226-6116
Mfr. Part No.:
IKW50N65EH5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

275 W

Number of Transistors

1

Package Type

PG-TO247

Configuration

Single

Channel Type

N

Pin Count

3

The Infineon IKW50N65EH5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.

Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat

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