Infineon, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

Kr. 881,34

(exc. VAT)

Kr. 1 101,66

(inc. VAT)

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Units
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30 - 30Kr. 29,378Kr. 881,34
60 - 120Kr. 27,91Kr. 837,30
150 +Kr. 26,731Kr. 801,93

*price indicative

RS Stock No.:
226-6116
Mfr. Part No.:
IKW50N65EH5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

275W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

30 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC

Width

16.13 mm

Length

41.42mm

Series

High Speed Fifth Generation

Automotive Standard

No

The Infineon IKW50N65EH5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.

Factor 2.5 lower Qg

Factor 2 reduction in switching losses

200mV reduction in VCEsat

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