STMicroelectronics, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

Kr.1 069 65 

(exc. VAT)

Kr.1 337 07 

(inc. VAT)

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Units
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Per Tube*
30 - 60Kr. 35,655Kr. 1 069,65
90 +Kr. 28,524Kr. 855,72

*price indicative

RS Stock No.:
168-7097
Mfr. Part No.:
STGW40H65FB
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

80A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

283W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Width

5.15 mm

Standards/Approvals

RoHS

Series

H

Height

20.15mm

Length

15.75mm

Automotive Standard

No

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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