STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

Kr.1 089 33 

(exc. VAT)

Kr.1 361 67 

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 30Kr. 36,311Kr. 1 089,33
60 - 120Kr. 35,365Kr. 1 060,95
150 +Kr. 34,495Kr. 1 034,85

*price indicative

RS Stock No.:
168-7096
Mfr. Part No.:
STGW60H65DFB
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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