STMicroelectronics STGW40H65DFB, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

Kr. 68,41

(exc. VAT)

Kr. 85,512

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8Kr. 34,205Kr. 68,41
10 - 98Kr. 33,35Kr. 66,70
100 - 498Kr. 32,375Kr. 64,75
500 +Kr. 31,63Kr. 63,26

*price indicative

Packaging Options:
RS Stock No.:
792-5795
Mfr. Part No.:
STGW40H65DFB
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

283W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Maximum Operating Temperature

175°C

Standards/Approvals

Lead (Pb) Free package, ECOPACK

Height

20.15mm

Series

H

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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