STMicroelectronics STGWT60H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole

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Subtotal (1 tube of 30 units)*

Kr.1 051 23 

(exc. VAT)

Kr.1 314 03 

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 30Kr. 35,041Kr. 1 051,23
60 - 120Kr. 34,129Kr. 1 023,87
150 +Kr. 33,29Kr. 998,70

*price indicative

RS Stock No.:
168-8686
Mfr. Part No.:
STGWT60H65DFB
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

375 W

Package Type

TO-3P

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.8 x 5 x 20.1mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
KR

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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