STMicroelectronics STGWT60H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole

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Subtotal (1 unit)*

Kr.52 97 

(exc. VAT)

Kr.66 21 

(inc. VAT)

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1 - 4Kr. 52,97
5 - 9Kr. 50,34
10 - 24Kr. 45,19
25 - 49Kr. 40,73
50 +Kr. 38,90

*price indicative

Packaging Options:
RS Stock No.:
829-4666
Mfr. Part No.:
STGWT60H65DFB
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

375 W

Package Type

TO-3P

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.8 x 5 x 20.1mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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