IXYS MIXA225PF1200TSF, Type N-Channel IGBT Module, 360 A 1200 V, 11-Pin SimBus F, PCB

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Subtotal (1 unit)*

Kr. 1 455,23

(exc. VAT)

Kr. 1 819,04

(inc. VAT)

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  • Shipping from 20 March 2026
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Units
Per unit
1 - 4Kr. 1 455,23
5 - 9Kr. 1 417,42
10 - 24Kr. 1 380,92
25 +Kr. 1 346,26

*price indicative

RS Stock No.:
124-0710
Mfr. Part No.:
MIXA225PF1200TSF
Brand:
IXYS
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Brand

IXYS

Maximum Continuous Collector Current Ic

360A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

2

Maximum Power Dissipation Pd

1100W

Package Type

SimBus F

Mount Type

PCB

Channel Type

Type N

Pin Count

11

Minimum Operating Temperature

150°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.8V

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Operating Temperature

-40°C

Width

62 mm

Height

17mm

Series

MIXA225PF1200TSF

Standards/Approvals

No

Length

152mm

Automotive Standard

No

IGBT Modules, IXYS


IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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