Renesas Electronics RJH60F3DPQ-A0#T0 IGBT, 40 A 600 V, 3-Pin TO-247A, Through Hole
- RS Stock No.:
- 124-3701P
- Mfr. Part No.:
- RJH60F3DPQ-A0#T0
- Brand:
- Renesas Electronics
View all IGBTs
In stock for same day dispatch
Price Each (Supplied in a Tube)
kr 33,20
(exc. VAT)
kr 41,50
(inc. VAT)
| Units | Per unit |
| 6 - 10 | kr 33,20 |
| 12 - 48 | kr 31,355 |
| 50 - 98 | kr 26,97 |
| 100 + | kr 25,625 |
Packaging Options:
- RS Stock No.:
- 124-3701P
- Mfr. Part No.:
- RJH60F3DPQ-A0#T0
- Brand:
- Renesas Electronics
- COO (Country of Origin):
- JP
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
| Attribute | Value |
| Maximum Continuous Collector Current | 40 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Power Dissipation | 178.5 W |
| Package Type | TO-247A |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.94 x 5.02 x 21.13mm |
| Maximum Operating Temperature | +150 °C |
| Gate Capacitance | 1260pF |