- RS Stock No.:
- 166-3322
- Mfr. Part No.:
- FGD3N60LSDTM
- Brand:
- ON Semiconductor
Discontinued product
- RS Stock No.:
- 166-3322
- Mfr. Part No.:
- FGD3N60LSDTM
- Brand:
- ON Semiconductor
Legislation and Compliance
Product Details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 6 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±25V |
Maximum Power Dissipation | 40 W |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 6.73 x 6.22 x 2.39mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
- RS Stock No.:
- 166-3322
- Mfr. Part No.:
- FGD3N60LSDTM
- Brand:
- ON Semiconductor