IXYS, Type N-Channel IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 168-4435
- Mfr. Part No.:
- IXGH40N120B2D1
- Brand:
- IXYS
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 168-4435
- Mfr. Part No.:
- IXGH40N120B2D1
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 380W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 140ns | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Series | Mid-Frequency | |
| Width | 15.75 mm | |
| Length | 19.81mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 380W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 140ns | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Series Mid-Frequency | ||
Width 15.75 mm | ||
Length 19.81mm | ||
Automotive Standard No | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.