Infineon, Type N-Channel IGBT, 75 A 1200 V, 4-Pin TO-247, Through Hole
- RS Stock No.:
- 218-4402
- Mfr. Part No.:
- IKY75N120CS6XKSA1
- Brand:
- Infineon
Currently unavailable
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- RS Stock No.:
- 218-4402
- Mfr. Part No.:
- IKY75N120CS6XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 880W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Switching Speed | 300ns | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 15.9 mm | |
| Height | 5.1mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Length | 41.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 880W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 4 | ||
Switching Speed 300ns | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Width 15.9 mm | ||
Height 5.1mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Length 41.2mm | ||
Automotive Standard No | ||
The Infineon high speed hard-switching TRENCHSTOP IGBT6 co-packed with a soft and fast recovery full current anti-parallel diode in a TO-247 package is designed to reach the best compromise between switching and conduction losses. It is used in industrial heating and welding and UPS system.
Lowest losses on IGBT, high system efficiency for higher power output
Fast and easy replacement of predecessor H3 technology
High device reliability and lifetime expectancy