onsemi FGY4L75T120SWD, Type N-Channel Common Emitter IGBT, 75 A 1200 V, 4-Pin TO-247-4L, Through Hole
- RS Stock No.:
- 277-080
- Mfr. Part No.:
- FGY4L75T120SWD
- Brand:
- onsemi
Bulk discount available
Subtotal (1 unit)*
Kr. 109,60
(exc. VAT)
Kr. 137,00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 30 unit(s) shipping from 04 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 109,60 |
| 10 - 99 | Kr. 98,73 |
| 100 - 499 | Kr. 91,06 |
| 500 - 999 | Kr. 84,43 |
| 1000 + | Kr. 75,62 |
*price indicative
- RS Stock No.:
- 277-080
- Mfr. Part No.:
- FGY4L75T120SWD
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 652W | |
| Number of Transistors | 1 | |
| Package Type | TO-247-4L | |
| Configuration | Common Emitter | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.8mm | |
| Standards/Approvals | RoHS | |
| Width | 5 mm | |
| Height | 22.54mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 652W | ||
Number of Transistors 1 | ||
Package Type TO-247-4L | ||
Configuration Common Emitter | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 4 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 15.8mm | ||
Standards/Approvals RoHS | ||
Width 5 mm | ||
Height 22.54mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor IGBT and Gen7 Diode in a TO247 4-lead package offer optimal performance with low switching and conduction losses, enabling high-efficiency operations. These components are designed for use in various applications such as solar inverters, uninterruptible power supplies (UPS), and energy storage systems (ESS), providing reliable and efficient power management in these demanding environments.
High current capability
Smooth and optimized switching
Low switching loss
RoHS compliant
Related links
- onsemi FGY4L140T120SWD Common Emitter IGBT 4-Pin TO-247-4L, Through Hole
- onsemi FGY4L160T120SWD Common Emitter IGBT 4-Pin TO-247-4L, Through Hole
- onsemi FGY4L100T120SWD Common Emitter IGBT 4-Pin TO-247-4L, Through Hole
- Infineon FP75R12N2T7BPSA2 Common Emitter IGBT 31-Pin, Panel Mount
- Infineon FS50R12KT3BPSA1 Common Emitter IGBT 28-Pin, Panel Mount
- Infineon IKQ140N120CH7XKSA1 Common Emitter IGBT 3-Pin TO-247, Through Hole
- Infineon IKQ100N120CH7XKSA1 Common Emitter IGBT 3-Pin TO-247, Through Hole
- Infineon FF450R12ME4EB11BPSA1 Common Emitter IGBT Module 13-Pin ECONODUAL