Infineon FP75R12N2T7BPSA2, N-Channel Common Emitter IGBT, 75 A 1200 V, 31-Pin EconoPIM2, Panel
- RS Stock No.:
- 273-2928
- Mfr. Part No.:
- FP75R12N2T7BPSA2
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 844,96
(exc. VAT)
Kr. 1 056,20
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- 15 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | Kr. 844,96 |
| 5 - 9 | Kr. 828,26 |
| 10 - 24 | Kr. 768,20 |
| 25 - 49 | Kr. 710,20 |
| 50 + | Kr. 692,46 |
*price indicative
- RS Stock No.:
- 273-2928
- Mfr. Part No.:
- FP75R12N2T7BPSA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 20mW | |
| Configuration | Common Emitter | |
| Package Type | EconoPIM2 | |
| Mount Type | Panel | |
| Channel Type | N | |
| Pin Count | 31 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.77V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 45mm | |
| Standards/Approvals | IEC 60749, IEC 60068, IEC 60747 | |
| Length | 107.5mm | |
| Height | 20.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 20mW | ||
Configuration Common Emitter | ||
Package Type EconoPIM2 | ||
Mount Type Panel | ||
Channel Type N | ||
Pin Count 31 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.77V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Width 45mm | ||
Standards/Approvals IEC 60749, IEC 60068, IEC 60747 | ||
Length 107.5mm | ||
Height 20.5mm | ||
Automotive Standard No | ||
The Infineon three phase PIM IGBT module with IGBT7, emitter controlled 7 diode and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings.
High reliability and power density
Copper base plate for optimized heat spread
High power density
Solder contact technology
Related links
- Infineon FP75R12N2T7BPSA2 75 A 1200 V Panel
- Infineon FP100R12N2T7BPSA2 100 A 1200 V Panel
- onsemi FGY4L75T120SWD 75 A 1200 V Through Hole
- Infineon FS50R12KT3BPSA1 75 A 1200 V Panel
- onsemi FGY4L100T120SWD 200 A 1200 V Through Hole
- Infineon FS50R12W1T7B11BOMA1 50 A 1200 V Module, Panel
- Infineon TDB6HK124N16RRBPSA1 70 A 1200 V Panel
- onsemi FGY4L160T120SWD 160 A 1200 V Through Hole