onsemi FGY4L100T120SWD, Type N-Channel Common Emitter IGBT, 200 A 1200 V, 4-Pin TO-247-4L, Through Hole

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Kr. 123,78

(exc. VAT)

Kr. 154,72

(inc. VAT)

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10 - 99Kr. 111,43
100 - 499Kr. 102,96
500 - 999Kr. 95,41
1000 +Kr. 85,57

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Packaging Options:
RS Stock No.:
277-076
Mfr. Part No.:
FGY4L100T120SWD
Brand:
onsemi
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Brand

onsemi

Product Type

IGBT

Maximum Continuous Collector Current Ic

200A

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

1

Maximum Power Dissipation Pd

1.07kW

Configuration

Common Emitter

Package Type

TO-247-4L

Mount Type

Through Hole

Channel Type

Type N

Pin Count

4

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Height

22.54mm

Length

15.8mm

Automotive Standard

No

COO (Country of Origin):
CN
The ON Semiconductor IGBT and Gen7 Diode in a TO247 4-lead package offer optimal performance with low switching and conduction losses, enabling high-efficiency operations. These components are designed for use in various applications such as solar inverters, uninterruptible power supplies (UPS), and energy storage systems (ESS), providing reliable and efficient power management in these demanding environments.

High current capability

Smooth and optimized switching

Low switching loss

RoHS compliant

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