STMicroelectronics STGF10NC60KD IGBT, 9 A 600 V, 3-Pin TO-220FP, Through Hole

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Subtotal (1 tube of 50 units)*

Kr.511 35 

(exc. VAT)

Kr.639 20 

(inc. VAT)

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Units
Per unit
Per Tube*
50 - 50Kr. 10,227Kr. 511,35
100 - 200Kr. 9,717Kr. 485,85
250 - 450Kr. 9,102Kr. 455,10
500 +Kr. 8,868Kr. 443,40

*price indicative

RS Stock No.:
168-7163
Mfr. Part No.:
STGF10NC60KD
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

9 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

25 W

Package Type

TO-220FP

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 16.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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