STMicroelectronics STGWT60H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 168-8686
- Mfr. Part No.:
- STGWT60H65DFB
- Brand:
- STMicroelectronics
Available to back order for despatch 08.05.2024
Added
Price Each (In a Tube of 30)
Kr. 32,038
(exc. VAT)
Kr. 40,048
(inc. VAT)
| Units | Per unit | Per Tube* |
| 30 - 30 | Kr. 32,038 | Kr. 961,14 |
| 60 - 120 | Kr. 31,219 | Kr. 936,57 |
| 150 + | Kr. 30,438 | Kr. 913,14 |
| *price indicative | ||
- RS Stock No.:
- 168-8686
- Mfr. Part No.:
- STGWT60H65DFB
- Brand:
- STMicroelectronics
Legislation and Compliance
- COO (Country of Origin):
- KR
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 375 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 20.1mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |