STMicroelectronics STGF20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-220FP

View all IGBTs
Bulk discount available

Subtotal (1 tube of 50 units)*

Kr.757 10 

(exc. VAT)

Kr.946 40 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 04. mai 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
50 - 50Kr. 15,142Kr. 757,10
100 - 200Kr. 14,732Kr. 736,60
250 - 450Kr. 14,339Kr. 716,95
500 - 950Kr. 13,975Kr. 698,75
1000 +Kr. 13,627Kr. 681,35

*price indicative

RS Stock No.:
204-9871
Mfr. Part No.:
STGF20H65DFB2
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

45 W

Package Type

TO-220FP

Pin Count

3

COO (Country of Origin):
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance

Related links