STMicroelectronics STGWA30H65DFB2, Type N-Channel IGBT, 50 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

Kr. 685,83

(exc. VAT)

Kr. 857,28

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 90Kr. 22,861Kr. 685,83
120 - 270Kr. 21,053Kr. 631,59
300 - 570Kr. 20,50Kr. 615,00
600 - 1170Kr. 19,974Kr. 599,22
1200 +Kr. 19,475Kr. 584,25

*price indicative

RS Stock No.:
204-9877
Mfr. Part No.:
STGWA30H65DFB2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

50A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

167W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

21.1 mm

Standards/Approvals

RoHS

Series

STG

Length

15.9mm

Height

5.1mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C

Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A

Very fast and soft recovery co-packaged diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

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