STMicroelectronics, Type N-Channel IGBT, 115 A 650 V, 3-Pin TO-247, Through Hole

View all IGBTs
Bulk discount available
View bulk pricing options

Subtotal 20 units (supplied in a tube)*

Kr. 1 091,40

(exc. VAT)

Kr. 1 364,20

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 6 unit(s) shipping from 20 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
20 - 98Kr. 54,57
100 - 198Kr. 52,855
200 +Kr. 45,76

*price indicative

Packaging Options:
RS Stock No.:
206-7212P
Mfr. Part No.:
STGWA75H65DFB2
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

115A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

357W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Operating Temperature

175°C

Series

STG

Length

15.9mm

Standards/Approvals

RoHS

Height

5.1mm

Automotive Standard

No

The STMicroelectronics Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package.

Maximum junction temperature: TJ = 175 °C

Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A

Very fast and soft recovery co-packaged diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

Positive VCE(sat) temperature coefficient

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy