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STMicroelectronics STGWA30IH65DF IGBT, 60 A 650 V, 4-Pin TO-247

RS Stock No.:: 206-8630P
Mfr. Part No.:: STGWA30IH65DF
Brand:: STMicroelectronics

STMicroelectronics STGWA30IH65DF IGBT, 60 A 650 V, 4-Pin TO-247

Bulk discount available

Subtotal 25 units (supplied in a tube)*

Kr.1 114 85

(exc. VAT)

Kr.1 393 55

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Temporarily out of stock

450 unit(s) shipping from 03. juni 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
25 - 45	Kr. 44,594
50 - 120	Kr. 43,426
125 - 245	Kr. 42,328
250 +	Kr. 41,23

*price indicative

RS Stock No.:: 206-8630P
Mfr. Part No.:: STGWA30IH65DF
Brand:: STMicroelectronics

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	STMicroelectronics
	Maximum Continuous Collector Current	60 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	1
	Maximum Power Dissipation	108 W
	Package Type	TO-247
	Pin Count	4

	Select all
	Brand STMicroelectronics
	Maximum Continuous Collector Current 60 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 1
	Maximum Power Dissipation 108 W
	Package Type TO-247
	Pin Count 4

Datasheet - STGWA30IH65DF

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Designed for soft commutation only
Maximum junction temperature: TJ = 175 °C
VCE(sat) = 1.55 V (typ.) @ IC = 30 A
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low drop voltage freewheeling co-packaged diode
Positive VCE(sat) temperature coefficient