Infineon, Type N-Channel IGBT in TRENCHSTOP TM 5 Technology, 74 A 650 V, 3-Pin TO-220, Through Hole

Bulk discount available

Subtotal (1 tube of 50 units)*

Kr. 893,65

(exc. VAT)

Kr. 1 117,05

(inc. VAT)

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Units
Per unit
Per Tube*
50 - 50Kr. 17,873Kr. 893,65
100 - 200Kr. 17,337Kr. 866,85
250 +Kr. 16,622Kr. 831,10

*price indicative

RS Stock No.:
215-6662
Mfr. Part No.:
IKP40N65H5XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

IGBT in TRENCHSTOP TM 5 Technology

Maximum Continuous Collector Current Ic

74A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

250W

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

Pb-free lead plating, RoHS

Series

High Speed Fifth Generation

Automotive Standard

No

The Infineon 650v fifth generation duopack insulated-gate bipolar transistor and diode of high speed switching series in trenchstop technology.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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