Infineon IHW50N65R6XKSA1, Type N-Channel Reverse Conducting IGBT, 83 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

Kr. 69,78

(exc. VAT)

Kr. 87,22

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18Kr. 34,89Kr. 69,78
20 - 48Kr. 31,46Kr. 62,92
50 - 98Kr. 29,285Kr. 58,57
100 - 198Kr. 27,225Kr. 54,45
200 +Kr. 25,455Kr. 50,91

*price indicative

Packaging Options:
RS Stock No.:
225-0576
Mfr. Part No.:
IHW50N65R6XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

Reverse Conducting IGBT

Maximum Continuous Collector Current Ic

83A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

251W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Series

TrenchStop

Standards/Approvals

No

Automotive Standard

No

The Infineon IHW50N65R6 is the 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.

Frequency range 20-75 kHz

Low EMI

Very tight parameter distribution

Maximum operating TJ of 175 °C

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