Infineon IHW50N65R6XKSA1 IGBT, 83 A 650 V, 3-Pin PG-TO247-3
- RS Stock No.:
- 225-0576
- Mfr. Part No.:
- IHW50N65R6XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.69 78
(exc. VAT)
Kr.87 22
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- 136 unit(s) shipping from 16. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 34,89 | Kr. 69,78 |
| 20 - 48 | Kr. 31,46 | Kr. 62,92 |
| 50 - 98 | Kr. 29,285 | Kr. 58,57 |
| 100 - 198 | Kr. 27,225 | Kr. 54,45 |
| 200 + | Kr. 25,455 | Kr. 50,91 |
*price indicative
- RS Stock No.:
- 225-0576
- Mfr. Part No.:
- IHW50N65R6XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 83 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 251 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 83 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 251 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon IHW50N65R6 is the 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.
Frequency range 20-75 kHz
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C
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