Infineon IKD03N60RFATMA1, Type N-Channel IGBT Single Transistor IC, 6.5 A 600 V, 3-Pin TO-252, Surface
- RS Stock No.:
- 226-6093
- Mfr. Part No.:
- IKD03N60RFATMA1
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 226-6093
- Mfr. Part No.:
- IKD03N60RFATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 6.5A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 53.6W | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 30kHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | TRENCHSTOP RC-DrivesFast | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 6.5A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 53.6W | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 30kHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series TRENCHSTOP RC-DrivesFast | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IKD03N60RF is higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching. It has smooth switching performance leading to low EMI level and its operating range is 4 to 30kHz.
Very tight parameter distribution
Maximum junction temperature 175°C
Short circuit capability of 5μs