Infineon IKW40N65F5FKSA1 Single IGBT, 74 A 650 V, 3-Pin PG-TO247
- RS Stock No.:
- 226-6114
- Mfr. Part No.:
- IKW40N65F5FKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
Kr.945 96
(exc. VAT)
Kr.1 182 45
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 660 unit(s) shipping from 01. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | Kr. 31,532 | Kr. 945,96 |
| 60 - 120 | Kr. 29,958 | Kr. 898,74 |
| 150 - 270 | Kr. 28,695 | Kr. 860,85 |
| 300 - 570 | Kr. 27,433 | Kr. 822,99 |
| 600 + | Kr. 25,542 | Kr. 766,26 |
*price indicative
- RS Stock No.:
- 226-6114
- Mfr. Part No.:
- IKW40N65F5FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 74 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 30V | |
| Maximum Power Dissipation | 255 W | |
| Number of Transistors | 1 | |
| Configuration | Single | |
| Package Type | PG-TO247 | |
| Channel Type | N | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 74 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 30V | ||
Maximum Power Dissipation 255 W | ||
Number of Transistors 1 | ||
Configuration Single | ||
Package Type PG-TO247 | ||
Channel Type N | ||
Pin Count 3 | ||
The Infineon IKW40N65F5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
Factor 2 reduction in switching losses
200mV reduction in VCEsat
Related links
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