Infineon FF600R12KT4HOSA1, Type N-Channel IGBT Module, 600 A 1.2 kV, 7-Pin AG-62MM, Surface
- RS Stock No.:
- 233-3498
- Mfr. Part No.:
- FF600R12KT4HOSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 2 027,40
(exc. VAT)
Kr. 2 534,25
(inc. VAT)
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- 4 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 1 | Kr. 2 027,40 |
| 2 - 4 | Kr. 1 926,04 |
| 5 + | Kr. 1 845,04 |
*price indicative
- RS Stock No.:
- 233-3498
- Mfr. Part No.:
- FF600R12KT4HOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 600A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Number of Transistors | 2 | |
| Package Type | AG-62MM | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 7 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | FF600R12KT4 | |
| Length | 106.4mm | |
| Height | 30.9mm | |
| Standards/Approvals | 60068, 60749, IEC 60747 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 600A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Number of Transistors 2 | ||
Package Type AG-62MM | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 7 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series FF600R12KT4 | ||
Length 106.4mm | ||
Height 30.9mm | ||
Standards/Approvals 60068, 60749, IEC 60747 | ||
Automotive Standard No | ||
The Infineon dual fast trench IGBT module with TRENCHSTOP IGBT4 and Emitter Controlled 4 diode.
Highest power density
Flexibility
Optimal electrical performance
Highest reliability
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