STMicroelectronics STGYA75H120DF2 IGBT, 150 A 1200 V, 3-Pin Max247, Through Hole

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Subtotal (1 tube of 30 units)*

Kr.2 550 42 

(exc. VAT)

Kr.3 188 04 

(inc. VAT)

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30 +Kr. 85,014Kr. 2 550,42

*price indicative

RS Stock No.:
234-8892
Mfr. Part No.:
STGYA75H120DF2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

750 W

Package Type

Max247

Mounting Type

Through Hole

Pin Count

3

The STMicroelectronics IGBT developed using an advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C
5 μs of short-circuit withstand time
VCE(sat) = 2.1 V (typ.) @ IC = 75 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast recovery antiparallel diode

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