Infineon, Type P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 162-3285
Mfr. Part No.:: IKQ75N120CT2XKSA1
Brand:: Infineon

Infineon, Type P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247, Through Hole

Bulk discount available

Subtotal (1 tube of 30 units)*

Kr. 2 536,92

(exc. VAT)

Kr. 3 171,15

(inc. VAT)

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Units	Per unit	Per Tube*
30 - 30	Kr. 84,564	Kr. 2 536,92
60 - 60	Kr. 80,335	Kr. 2 410,05
90 +	Kr. 76,671	Kr. 2 300,13

*price indicative

RS Stock No.:: 162-3285
Mfr. Part No.:: IKQ75N120CT2XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	150A
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	938W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type P
	Pin Count	3
	Switching Speed	20kHz
	Maximum Collector Emitter Saturation Voltage VceSAT	2.15V
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Series	TrenchStop
	Automotive Standard	No
	Energy Rating	10.8mJ

	Select all
	Brand Infineon
	Product Type IGBT
	Maximum Continuous Collector Current Ic 150A
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 938W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type P
	Pin Count 3
	Switching Speed 20kHz
	Maximum Collector Emitter Saturation Voltage VceSAT 2.15V
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Series TrenchStop
	Automotive Standard No
	Energy Rating 10.8mJ

Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode.

High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint

20% lower R th(jh) compared to TO-247 3 pin

Extended collector-emitter pin creepage of 4.25 mm

Extended clip creepage due to fully encapsulated front side of the package

Higher system power density – I c increase keeping the same system thermal performance

Lower thermal resistance R th(jh) and improved by ∼15% heat dissipation capability of TO-247PLUS vs TO-247

Higher reliability, extended lifetime of the device

Infineon, Type P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247, Through Hole

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